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0b2d4d4879
Recommendation is to avoid using the year nomenclature as this information is already encoded in the git repo. Avoids needing to repeatly update. Also updates AUTHORS.txt from current repo with contributor names
186 lines
31 KiB
C++
186 lines
31 KiB
C++
/*
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* This program source code file is part of KiCad, a free EDA CAD application.
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*
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* Copyright (C) 2022 Mikolaj Wielgus
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* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
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*
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* This program is free software; you can redistribute it and/or
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* modify it under the terms of the GNU General Public License
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* as published by the Free Software Foundation; either version 2
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* of the License, or (at your option) any later version.
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*
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* This program is distributed in the hope that it will be useful,
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* but WITHOUT ANY WARRANTY; without even the implied warranty of
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* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
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* GNU General Public License for more details.
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*
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* You should have received a copy of the GNU General Public License
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* along with this program; if not, you may find one here:
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* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
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* or you may search the http://www.gnu.org website for the version 2 license,
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* or you may write to the Free Software Foundation, Inc.,
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* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
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*/
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#include <sim/sim_model_ngspice.h>
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void NGSPICE_MODEL_INFO_MAP::addMES()
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{
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modelInfos[MODEL_TYPE::MES] = { "MES", "NMF", "PMF", { "D", "G", "S" }, "GaAs MESFET model", {}, {} };
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// Model parameters
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "type", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-693161728", "116101380", "N-type or P-type MESfet model" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "nmf", 113, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MESfet model" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "pmf", 114, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MESfet model" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Pinch-off voltage" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "alpha", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Saturation voltage parameter" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "beta", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "0.0025", "0.0025", "Transconductance parameter" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "lambda", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation parm." );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "b", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.3", "0.3", "Doping tail extending parameter" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "rd", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain conductance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "rs", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source conductance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "cgs", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-S junction capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "cgd_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D junction capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "is_", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Junction saturation current" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "fc", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "depl_cap", 303, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0.5", "0.5", "Depletion capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "vcrit", 304, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.730289", "0.730289", "Critical voltage" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "kf", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "NaN", "NaN", "Flicker noise coefficient" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "af", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "NaN", "NaN", "Flicker noise exponent" );
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// Instance parameters
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "off", 5, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "m", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "area", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Area factor", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "icvds", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "icvgs", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "dnode", 201, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "gnode", 202, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "snode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "dprimenode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "sprimenode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "vgs", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "vgd", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain voltage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "cg", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate capacitance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "cd", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain capacitance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "cgd", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Gate-Drain capacitance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "gm", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "gds", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "ggs", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source conductance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "ggd", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain conductance", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "cqgs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "cqgd", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "qgs", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "qgd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "is", 6, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
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modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back( "p", 7, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Power dissipated by the mesfet", true );
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modelInfos[MODEL_TYPE::MESA] = { "MESA", "NMF", "PMF", { "D", "G", "S" }, "GaAs MESFET model", {}, {} };
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// Model parameters
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "type", 165, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmf", "nmf", "N-type or P-type MESfet model" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-1.26", "-1.26", "Pinch-off voltage" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-1.26", "-1.26", "n.a." );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "lambda", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.045", "0.045", "Output conductance parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "lambdahf", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.045", "0.045", "Output conductance parameter at high frequencies" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "beta", 153, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V^2", SIM_MODEL::PARAM::CATEGORY::DC, "0.0085", "0.0085", "Transconductance parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vs", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "150000", "150000", "Saturation velocity" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rd", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rs", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rg", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ri", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rf", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rdi", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Intrinsic source ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rsi", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Intrinsic drain ohmic resistance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "phib", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "8.01088e-20", "8.01088e-20", "Effective Schottky barrier height at room temperature" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "phib1", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tphib", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "astar", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "40000", "40000", "Effective Richardson constant" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ggr", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "40", "40", "Reverse diode conductance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "del", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.04", "0.04", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "xchi", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.033", "0.033", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tggr", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0.033", "0.033", "n.a." );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "n", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Emission coefficient" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "eta", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.73", "1.73", "Subthreshold ideality factor" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "m_", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2.5", "2.5", "Knee shape parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "mc", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "3", "3", "Knee shape parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "alpha", 149, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "sigma0", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.081", "0.081", "Threshold voltage coefficient" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vsigmat", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.01", "1.01", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vsigma", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "mu", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.23", "0.23", "Mobility" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "theta", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "mu1", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Second moblity parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "mu2", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Third moblity parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "d", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.2e-07", "1.2e-07", "Depth of device" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "nd", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2e+23", "2e+23", "Doping density" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "du", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "3.5e-08", "3.5e-08", "Depth of device" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ndu", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1e+22", "1e+22", "Doping density" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "th", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-08", "1e-08", "Thickness of delta doped layer" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ndelta", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "6e+24", "6e+24", "Delta doped layer doping density" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "delta", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "5", "5", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tc", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Transconductance compression factor" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tvto", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Temperature coefficient for vto" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "alphat", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tlambda", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1.79769e+308", "1.79769e+308", "Temperature coefficient for lambda" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "teta0", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1.79769e+308", "1.79769e+308", "First temperature coefficient for eta" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "teta1", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Second temperature coefficient for eta" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tmu", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "300.15", "300.15", "Temperature coefficient for mobility" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "xtm0", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "First exponent for temp dependence of mobility" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "xtm1", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Second exponent for temp dependence of mobility" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "xtm2", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Third exponent for temp dependence of mobility" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ks", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sidegating coefficient" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vsg", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sidegating voltage" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tf", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "300.15", "300.15", "Characteristic temperature determined by traps" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "flo", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "delfo", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "ag", 147, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rtc1", 150, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "rtc2", 151, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "zeta", 152, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "level", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "2", "2", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "nmax", 159, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2e+16", "2e+16", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "gamma", 160, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "3", "3", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "epsi", 161, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.08411e-10", "1.08411e-10", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "cas", 163, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "cbs", 162, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "pmf", 164, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MESfet model" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "nmf", 131, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MESfet model" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.79769e+308", "1.79769e+308", "Drain conductance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1.79769e+308", "1.79769e+308", "Source conductance" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "vcrit", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Critical voltage" );
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// Instance parameters
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "off", 8, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "m", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "2.5", "2.5", "Parallel Multiplier", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "l", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length of device", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "w", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width of device", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "icvds", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "icvgs", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "td", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance drain temperature", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "ts", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance source temperature", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "dtemp", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "dnode", 201, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "gnode", 202, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "snode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "dprimenode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "sprimenode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "gprimenode", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal gate node", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "vgs", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "vgd", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain voltage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cg", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate capacitance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cd", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain capacitance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cgd", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate_Drain capacitance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "gm", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "gds", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "ggs", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source conductance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "ggd", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain conductance", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "qgs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cqgs", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "qgd", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cqgd", 219, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "cs", 9, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source current", true );
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modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back( "p", 10, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Power dissipated by the mesfet", true );
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} |