realAscot/kicad-source
1
0
Fork 0
mirror of https://gitlab.com/kicad/code/kicad.git synced 2025-09-14 18:23:15 +02:00
Code Issues Packages Projects Releases Wiki Activity
kicad-source/eeschema/sim/sim_model_ngspice_data_mos.cpp
Seth Hillbrand 0b2d4d4879 Revise Copyright statement to align with TLF 
Recommendation is to avoid using the year nomenclature as this
information is already encoded in the git repo.  Avoids needing to
repeatly update.

Also updates AUTHORS.txt from current repo with contributor names
2025-01-01 14:12:04 -08:00

511 lines
98 KiB
C++
Raw Blame History

/*
* This program source code file is part of KiCad, a free EDA CAD application.
*
* Copyright (C) 2022 Mikolaj Wielgus
* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License
* as published by the Free Software Foundation; either version 2
* of the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, you may find one here:
* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
* or you may search the http://www.gnu.org website for the version 2 license,
* or you may write to the Free Software Foundation, Inc.,
* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
*/
#include <sim/sim_model_ngspice.h>
void NGSPICE_MODEL_INFO_MAP::addMOS()
{
modelInfos[MODEL_TYPE::VDMOS] = { "VDMOS", "NCHAN", "PCHAN", { "D", "G", "S", "<TJ>", "<TCASE>" }, "DMOS model based on Level 1 MOSFET model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "type", 116, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::DC, "vdmosn", "vdmosp", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "3", "-3", "Threshold voltage" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vth0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V^2", SIM_MODEL::PARAM::CATEGORY::DC, "35", "15", "Transconductance parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "phi", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "lambda", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "theta", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vgs dependence on mobility" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rg", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate ohmic resistance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "kf", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "af", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise exponent" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosn", 111, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type DMOSfet model" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosp", 112, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type DMOSfet model" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmos", 117, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "DMOS transistor" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rq", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation resistance fitting parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vq", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation voltage fitting parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "mtriode", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Conductance multiplier in triode region" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tcvth", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Linear Vth0 temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vtotc", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "mu", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "-1.5", "-1.5", "Exponent of gain temperature dependency" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "bex", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-1.5", "-1.5", "n.a." );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "texp0", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1.5", "1.5", "Drain resistance rd0 temperature exponent" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "texp1", 147, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0.3", "0.3", "Drain resistance rd1 temperature exponent" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trd1", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Drain resistance linear temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trd2", 149, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Drain resistance quadratic temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trg1", 150, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Gate resistance linear temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trg2", 151, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Gate resistance quadratic temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trs1", 152, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Source resistance linear temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trs2", 153, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Source resistance quadratic temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trb1", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Body resistance linear temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "trb2", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Body resistance quadratic temperature coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "subshift", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Shift of weak inversion plot on the vgs axis" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "ksubthres", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "Slope of weak inversion log current versus vgs" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tksubthres1", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Linear temperature coefficient of ksubthres" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tksubthres2", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Quadratic temperature coefficient of ksubthres" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "bv", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1e+99", "1e+99", "Vds breakdown voltage" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "ibv", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-10", "1e-10", "Current at Vds=bv" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "nbv", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Vds breakdown emission coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rds", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "1e+15", "1e+15", "Drain-source shunt resistance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rb", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Body diode ohmic resistance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "n", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Body diode emission coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tt", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Body diode transit time" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "eg", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1.11", "1.11", "Body diode activation energy for temperature effect on Is" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "xti", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3", "3", "Body diode saturation current temperature exponent" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "is_", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Body diode saturation current" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vj", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Body diode junction potential" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cjo", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "5e-10", "5e-10", "Zero-bias body diode junction capacitance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "m_", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Body diode grading coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "fc", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Body diode coefficient for forward-bias depletion capacitance formula" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgdmin", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "2e-11", "2e-11", "Minimum non-linear G-D capacitance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgdmax", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "2e-9", "2e-9", "Maximum non-linear G-D capacitance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "a", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Non-linear Cgd capacitance parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgs_", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "1.4e-9", "1.4e-9", "Gate-source capacitance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rthjc", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1", "1", "Self-heating thermal resistance, junction-to-case" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rthca", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1000", "1000", "Self-heating thermal resistance, case-to-ambient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cthj", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "1e-05", "1e-05", "Self-heating thermal capacitance" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vgs_max", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage G-S branch" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vgd_max", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage G-D branch" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vds_max", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage D-S branch" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vgsr_max", 159, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage G-S branch" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vgdr_max", 160, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage G-D branch" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "pd_max", 161, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum device power dissipation" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "id_max", 162, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "0", "0", "maximum drain/source current" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "idr_max", 163, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum drain/source reverse current" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "te_max", 164, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum temperature" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rth_ext", 165, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1000", "1000", "thermal resistance case to ambient, incl. heat sink" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "derating", 166, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "thermal derating for power" );
// Instance parameters
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "m", 9, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "0.5", "0.5", "Multiplier", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "off", 1, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::FLAGS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "icvds", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "icvgs", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "temp", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "dtemp", 10, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "deg C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "ic", 2, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S voltages", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "thermal", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::FLAGS, "", "", "Thermal model switch on/off", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "id", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "is", 6, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "ig", 5, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "vgs", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "vds", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "cgs", 201, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "cgd", 202, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "cds", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source capacitance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "idio", 223, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Body diode current", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "dnode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the drain node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "gnode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the gate node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "snode", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the source node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "tempnode", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of temperature node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "tcasenode", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of 2nd temperature node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "dnodeprime", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. drain node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "snodeprime", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. source node", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "von", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device on state voltage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "rs", 224, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "sourceconductance", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance of source", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "rd", 225, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain conductance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "drainconductance", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance of drain", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "gm", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "gds", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "cqgs", 220, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "cqgd", 222, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "qgs", 219, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "qgd", 221, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::VDMOS].instanceParams.emplace_back( "p", 7, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instantaneous power", true );
modelInfos[MODEL_TYPE::MOS1] = { "Mos1", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Level 1 MOSfet model with Meyer capacitance model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "type", 133, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2e-05", "2e-05", "Transconductance parameter" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "lambda", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbd_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbs_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "is_", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "pb", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cgso", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cgdo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cgbo", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-bulk overlap cap." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rsh", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cj", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "mj", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cjsw", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "mjsw", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Side grading coefficient" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "js", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "tox", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Oxide thickness" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "ld", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "u0", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface mobility" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "uo", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "fc", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "nmos", 128, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "pmos", 129, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "nsub", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "tpg", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "nss", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "tnom", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "kf", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "NaN", "NaN", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "af", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "NaN", "NaN", "Flicker noise exponent" );
// Instance parameters
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "m", 21, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Multiplier", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source perimeter", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "temp", 20, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "dtemp", 22, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "id", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ibd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "ibs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction current", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "vgs", 231, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "vds", 232, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "vbs", 230, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "vbd", 229, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "dnode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the drain node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gnode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the gate node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "snode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the source node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "bnode", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "dnodeprime", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. drain node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "snodeprime", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. source node", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "vdsat", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sourcevcrit", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "drainvcrit", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "rs", 258, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sourceconductance", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance of source", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "rd", 259, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain conductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "drainconductance", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance of drain", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gm", 219, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gds", 220, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gmb", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gbd", 221, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "gbs", 222, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cbd", 223, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cbs", 224, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cgs", 233, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cgd", 236, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cgb", 239, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cqgs", 235, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cqgd", 238, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cqgb", 241, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cqbd", 243, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cqbs", 245, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cbd0", 225, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "cbs0", 227, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "qgs", 234, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "qgd", 237, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "qgb", 240, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "qbd", 242, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "qbs", 244, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instaneous power", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_dc", 256, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_real", 246, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_imag", 247, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_mag", 248, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_ph", 249, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_l_cplx", 250, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_dc", 257, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_real", 251, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_imag", 252, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_mag", 253, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_ph", 254, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
modelInfos[MODEL_TYPE::MOS1].instanceParams.emplace_back( "sens_w_cplx", 255, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS2] = { "Mos2", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Level 2 MOSfet model with Meyer capacitance model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "type", 141, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2.07189e-05", "2.07189e-05", "Transconductance parameter" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "lambda", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbd_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbs_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "is_", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "pb", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cgso", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Gate-source overlap cap." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cgdo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Gate-drain overlap cap." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cgbo", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Gate-bulk overlap cap." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rsh", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cj", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "mj", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cjsw", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "mjsw", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.33", "0.33", "Side grading coefficient" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "js", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "tox", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Oxide thickness" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "ld", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "u0", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "600", "600", "Surface mobility" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "uo", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "600", "600", "n.a." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "fc", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "nmos", 135, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "pmos", 136, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "nsub", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "tpg", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "nss", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "delta", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width effect on threshold" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "uexp", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Crit. field exp for mob. deg." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "ucrit", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V/cm", SIM_MODEL::PARAM::CATEGORY::DC, "10000", "10000", "Crit. field for mob. degradation" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "vmax", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Maximum carrier drift velocity" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "xj", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Junction depth" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "neff", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Total channel charge coeff." );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "nfs", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Fast surface state density" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "tnom", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "kf", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "af", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise exponent" );
// Instance parameters
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "m", 80, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Multiplier", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source perimeter", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "id", 34, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ibd", 36, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ibs", 35, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "vgs", 50, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "vds", 51, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "vbs", 49, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "vbd", 48, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "temp", 77, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance operating temperature", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "dtemp", 81, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "dnode", 22, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gnode", 23, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "snode", 24, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "bnode", 25, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of bulk node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "dnodeprime", 26, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "snodeprime", 27, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "vdsat", 31, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sourcevcrit", 32, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "drainvcrit", 33, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "rs", 78, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sourceconductance", 28, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source conductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "rd", 79, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain resistance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "drainconductance", 29, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain conductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gm", 38, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gds", 39, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gmb", 37, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gbd", 40, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "gbs", 41, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cbd", 42, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cbs", 43, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cgs", 52, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cgd", 55, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cgb", 58, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cbd0", 44, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cbs0", 46, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cqgs", 54, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cqgd", 57, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cqgb", 60, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cqbd", 62, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "cqbs", 64, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "qgs", 53, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "qgd", 56, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "qgb", 59, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "qbd", 61, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "qbs", 63, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instantaneous power", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_dc", 75, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_real", 70, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_imag", 71, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_cplx", 74, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_mag", 72, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_l_ph", 73, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_dc", 76, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_real", 65, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity and real part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_imag", 66, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_mag", 67, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_ph", 68, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
modelInfos[MODEL_TYPE::MOS2].instanceParams.emplace_back( "sens_w_cplx", 69, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS3] = { "Mos3", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Level 3 MOSfet model with Meyer capacitance model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "type", 144, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "nmos", 133, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "pmos", 134, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2.07189e-05", "2.07189e-05", "Transconductance parameter" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rd_", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rs_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbd_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbs_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cgso", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cgdo", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cgbo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-bulk overlap cap." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rsh", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cj", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "mj", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cjsw", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "mjsw", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.33", "0.33", "Side grading coefficient" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "js", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "tox", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Oxide thickness" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "ld", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "xl", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Length mask adjustment" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "wd", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width Narrowing (Diffusion)" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "xw", 147, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width mask adjustment" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "delvto", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage Adjust" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "delvt0", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Threshold voltage Adjust" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "u0", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "600", "600", "Surface mobility" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "uo", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "600", "600", "n.a." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "fc", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "nsub", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "tpg", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "nss", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "vmax", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Maximum carrier drift velocity" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "xj", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Junction depth" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "nfs", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Fast surface state density" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "xd", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Depletion layer width" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "alpha", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Alpha" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "eta", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vds dependence of threshold voltage" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "delta", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width effect on threshold" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "theta", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vgs dependence on mobility" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "kappa", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.2", "0.2", "Kappa" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "tnom", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "kf", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "af", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise exponent" );
// Instance parameters
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "m", 80, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Multiplier", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source perimeter", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "id", 34, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cd", 34, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ibd", 36, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ibs", 35, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "vgs", 50, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "vds", 51, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "vbs", 49, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "vbd", 48, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "temp", 77, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance operating temperature", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "dtemp", 81, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "dnode", 22, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gnode", 23, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "snode", 24, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "bnode", 25, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of bulk node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "dnodeprime", 26, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "snodeprime", 27, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "von", 30, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Turn-on voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "vdsat", 31, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sourcevcrit", 32, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "drainvcrit", 33, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "rs", 78, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sourceconductance", 28, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source conductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "rd", 79, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain resistance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "drainconductance", 29, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain conductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gm", 38, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gds", 39, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gmb", 37, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gmbs", 37, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gbd", 40, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "gbs", 41, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbd", 42, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbs", 43, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cgs", 52, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cgd", 55, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cgb", 58, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cqgs", 54, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cqgd", 57, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cqgb", 60, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cqbd", 62, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cqbs", 64, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbd0", 44, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbdsw0", 45, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D sidewall capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbs0", 46, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "cbssw0", 47, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S sidewall capacitance", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "qbs", 63, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "qgs", 53, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "qgd", 56, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "qgb", 59, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "qbd", 61, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instantaneous power", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_dc", 76, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_real", 70, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_imag", 71, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_cplx", 74, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_mag", 72, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_l_ph", 73, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_dc", 75, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_real", 65, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_imag", 66, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_mag", 67, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_ph", 68, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
modelInfos[MODEL_TYPE::MOS3].instanceParams.emplace_back( "sens_w_cplx", 69, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
}
Reference in New Issue View Git Blame Copy Permalink