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kicad-source/eeschema/sim/sim_model_ngspice_data_mos6.cpp
Seth Hillbrand 0b2d4d4879 Revise Copyright statement to align with TLF 
Recommendation is to avoid using the year nomenclature as this
information is already encoded in the git repo.  Avoids needing to
repeatly update.

Also updates AUTHORS.txt from current repo with contributor names
2025-01-01 14:12:04 -08:00

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/*
* This program source code file is part of KiCad, a free EDA CAD application.
*
* Copyright (C) 2022 Mikolaj Wielgus
* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License
* as published by the Free Software Foundation; either version 2
* of the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, you may find one here:
* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
* or you may search the http://www.gnu.org website for the version 2 license,
* or you may write to the Free Software Foundation, Inc.,
* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
*/
#include <sim/sim_model_ngspice.h>
void NGSPICE_MODEL_INFO_MAP::addMOS6()
{
modelInfos[MODEL_TYPE::MOS6] = { "Mos6", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Level 6 MOSfet model with Meyer capacitance model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "type", 140, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "kv", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Saturation voltage factor" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nv", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Saturation voltage coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "kc", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "5e-05", "5e-05", "Saturation current factor" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nc", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Saturation current coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nvth", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Threshold voltage coeff." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ps_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sat. current modification par." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma1", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter 1" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "sigma", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "static const feedback effect par." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "phi", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda0", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 0" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda1", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 1" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rd_", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rs_", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbd_", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbs_", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "is_", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "pb", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgso", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgdo", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgbo", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-bulk overlap cap." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rsh", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cj", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "mj", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cjsw", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "mjsw", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Side grading coefficient" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "js", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ld", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tox", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Oxide thickness" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "u0", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface mobility" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "uo", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "fc", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nmos", 137, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "pmos", 138, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tpg", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nsub", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nss", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "tnom", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "300.15", "300.15", "Parameter measurement temperature" );
// Instance parameters
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "m", 22, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "0", "0", "Source perimeter", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "id", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cd", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ibs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ibd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vgs", 231, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vds", 232, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vbs", 230, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vbd", 229, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "temp", 20, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dtemp", 21, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dnode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the drain node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gnode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the gate node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "snode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the source node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "bnode", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of the node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "dnodeprime", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. drain node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "snodeprime", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of int. source node", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "rs", 258, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sourceconductance", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "rd", 259, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain resistance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "drainconductance", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "von", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Turn-on voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "vdsat", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sourcevcrit", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "drainvcrit", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gmbs", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gm", 219, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gds", 220, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gbd", 221, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "gbs", 222, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgs", 233, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgd", 236, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cgb", 239, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbd", 223, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbs", 224, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbd0", 225, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cbs0", 227, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgs", 235, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgd", 238, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqgb", 241, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqbd", 243, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "cqbs", 245, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgs", 234, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgd", 237, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qgb", 240, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qbd", 242, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "qbs", 244, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instaneous power", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_dc", 256, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_real", 246, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_imag", 247, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_mag", 248, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_ph", 249, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_l_cplx", 250, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_dc", 257, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_real", 251, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_imag", 252, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_mag", 253, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_ph", 254, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
modelInfos[MODEL_TYPE::MOS6].instanceParams.emplace_back( "sens_w_cplx", 255, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
}
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