modelInfos[MODEL_TYPE::MES].modelParams.emplace_back("type",305,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"-693161728","116101380","N-type or P-type MESfet model");
modelInfos[MODEL_TYPE::MES].modelParams.emplace_back("nmf",113,SIM_MODEL::PARAM::DIR_IN,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","N type MESfet model");
modelInfos[MODEL_TYPE::MES].modelParams.emplace_back("pmf",114,SIM_MODEL::PARAM::DIR_IN,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","P type MESfet model");
modelInfos[MODEL_TYPE::MES].modelParams.emplace_back("alpha",102,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"2","2","Saturation voltage parameter");
modelInfos[MODEL_TYPE::MES].modelParams.emplace_back("fc",112,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0.5","0.5","Forward bias junction fit parm.");
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("dnode",201,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of drain node",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("gnode",202,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of gate node",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("snode",203,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of source node",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("dprimenode",204,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of internal drain node",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("sprimenode",205,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of internal source node",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("cqgs",216,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Capacitance due to gate-source charge storage",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("cqgd",218,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Capacitance due to gate-drain charge storage",true);
modelInfos[MODEL_TYPE::MES].instanceParams.emplace_back("p",7,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Power dissipated by the mesfet",true);
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("type",165,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_STRING,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"nmf","nmf","N-type or P-type MESfet model");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("lambdahf",143,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0.045","0.045","Output conductance parameter at high frequencies");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("sigma0",121,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"0.081","0.081","Threshold voltage coefficient");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("d",127,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1.2e-07","1.2e-07","Depth of device");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("du",154,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"3.5e-08","3.5e-08","Depth of device");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("th",156,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::DC,"1e-08","1e-08","Thickness of delta doped layer");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("tvto",132,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature coefficient for vto");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("tlambda",134,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"1.79769e+308","1.79769e+308","Temperature coefficient for lambda");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("teta0",135,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"1.79769e+308","1.79769e+308","First temperature coefficient for eta");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("teta1",136,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Second temperature coefficient for eta");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("tmu",137,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"300.15","300.15","Temperature coefficient for mobility");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("xtm0",138,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","First exponent for temp dependence of mobility");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("xtm1",139,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Second exponent for temp dependence of mobility");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("xtm2",140,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Third exponent for temp dependence of mobility");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("tf",144,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"300.15","300.15","Characteristic temperature determined by traps");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("pmf",164,SIM_MODEL::PARAM::DIR_IN,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","P type MESfet model");
modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back("nmf",131,SIM_MODEL::PARAM::DIR_IN,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","N type MESfet model");
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("l",1,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::GEOMETRY,"","","Length of device",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("w",2,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::GEOMETRY,"","","Width of device",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("dtemp",11,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Instance temperature difference",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("dnode",201,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of drain node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("gnode",202,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of gate node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("snode",203,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of source node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("dprimenode",204,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of internal drain node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("sprimenode",205,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of internal source node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("gprimenode",206,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of internal gate node",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("cqgs",217,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Capacitance due to gate-source charge storage",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("cqgd",219,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Capacitance due to gate-drain charge storage",true);
modelInfos[MODEL_TYPE::MESA].instanceParams.emplace_back("p",10,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Power dissipated by the mesfet",true);