modelInfos[MODEL_TYPE::HICUM2]={"hicum2","NPN","PNP",{"C","B","E","S","TJ"},"High Current Model for BJT",{},{}};
// Model parameters
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("type",305,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_STRING,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"npn","pnp","For transistor type NPN(+1) or PNP (-1)");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("npn",101,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"NaN","NaN","NPN type device");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("pnp",102,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_BOOL,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"NaN","NaN","PNP type device");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tnom",103,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"300.15","300.15","Temperature at which parameters are specified");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("version",104,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_STRING,"",SIM_MODEL::PARAM::CATEGORY::DC,"2.4.0","2.4.0","parameter for model version");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("ich",107,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","High-current correction for 2D and 3D effects");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("hf0",108,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Weight factor for the low current minority charge");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("hfe",109,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Emitter minority charge weighting factor in HBTs");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("hfc",110,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Collector minority charge weighting factor in HBTs");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("hjei",111,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","B-E depletion charge weighting factor in HBTs");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("ahjei",112,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Parameter describing the slope of hjEi(VBE)");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rhjei",113,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Smoothing parameter for hjEi(VBE) at high voltage");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("hjci",114,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","B-C depletion charge weighting factor in HBTs");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mbei",116,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Internal B-E current ideality factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mbep",120,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Peripheral B-E current ideality factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mrep",122,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"2","2","Peripheral B-E recombination current ideality factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mcf",123,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Non-ideality factor for III-V HBTs");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tbhrec",124,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Base current recombination time constant at B-C barrier for high forward injection");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mbci",126,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Internal B-C current ideality factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("mbcx",128,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","External B-C current ideality factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("abet",130,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"40","40","Exponent factor for tunneling current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tunode",131,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Specifies the base node connection for the tunneling current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("favl",132,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Avalanche current factor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("qavl",133,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Exponent factor for avalanche current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("kavl",134,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Flag/factor for turning strong avalanche on");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alfav",135,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC for FAVL");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alqav",136,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC for QAVL");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alkav",137,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC for KAVL");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rbi0",138,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Zero bias internal base resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rbx",139,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","External base series resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("fgeo",140,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0.6557","0.6557","Factor for geometry dependence of emitter current crowding");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("fdqr0",141,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Correction factor for modulation by B-E and B-C space charge layer");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("fcrbi",142,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Ratio of HF shunt to total internal capacitance (lateral NQS effect)");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("fqi",143,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Ration of internal to total minority charge");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("re",144,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Emitter series resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rcx",145,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","External collector series resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("itss",146,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Substrate transistor transfer saturation current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("msf",147,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Forward ideality factor of substrate transfer current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("msc",149,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Ideality factor of C-S diode current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tsf",150,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"s",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Transit time for forward operation of substrate transistor");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rsu",151,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Substrate series resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("ajei",156,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::DC,"2.5","2.5","Ratio of maximum to zero-bias value of internal B-E capacitance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("ajep",160,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::DC,"2.5","2.5","Ratio of maximum to zero-bias value of peripheral B-E capacitance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("t0",179,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Low current forward transit time at VBC=0V");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("dt0h",180,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Time constant for base and B-C space charge layer width modulation");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tbvl",181,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"s",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Time constant for modeling carrier jam at low VCE");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("gtfe",183,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"1","1","Exponent factor for current dependence of neutral emitter storage time");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("thcs",184,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Saturation time constant at high current densities");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("ahc",185,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0.1","0.1","Smoothing factor for current dependence of base and collector transit time");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("fthc",186,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Partitioning factor for base and collector portion");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("rci0",187,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::DC,"150","150","Internal collector resistance at low electric field");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("vlim",188,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"0.5","0.5","Voltage separating ohmic and saturation velocity regime");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("aick",191,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0.001","0.001","Smoothing term for ICK");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("delck",192,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"2","2","Fitting factor for critical current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("tr",193,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"s",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Storage time for inverse operation");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("acbar",196,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"0.01","0.01","Smoothing parameter for barrier voltage");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alqf",199,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"s",SIM_MODEL::PARAM::CATEGORY::DC,"0.167","0.167","Factor for additional delay time of minority charge");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alit",200,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0.333","0.333","Factor for additional delay time of transfer current");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("flnqs",201,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Flag for turning on and off of vertical NQS effect");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("cfbe",204,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::NOISE,"0","0","Flag for determining where to tag the flicker noise source");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("flcono",205,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::NOISE,"0","0","Flag for turning on and off of correlated noise implementation");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("latb",208,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Scaling factor for collector minority charge in direction of emitter width");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("latl",209,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Scaling factor for collector minority charge in direction of emitter length");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("vgb",210,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::DC,"1.17","1.17","Bandgap voltage extrapolated to 0 K");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alt0",211,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","First order relative TC of parameter T0");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("kt0",212,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Second order relative TC of parameter T0");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetaci",213,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature exponent for RCI0");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alvs",214,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"m/s",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC of saturation drift velocity");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alces",215,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC of VCES");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetarbi",216,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature exponent of internal base resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetarbx",217,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature exponent of external base resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetarcx",218,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature exponent of external collector resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetare",219,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature exponent of emitter resistance");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetacx",220,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"1","1","Temperature exponent of mobility in substrate transistor transit time");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("f1vg",224,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"-0.000102377","-0.000102377","Coefficient K1 in T-dependent band-gap equation");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("f2vg",225,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0.00043215","0.00043215","Coefficient K2 in T-dependent band-gap equation");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetact",226,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"3","3","Exponent coefficient in transfer current temperature dependence");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetabet",227,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"3.5","3.5","Exponent coefficient in B-E junction current temperature dependence");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alb",228,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Relative TC of forward current gain for V2.1 model");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("dvgbe",229,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Bandgap difference between B and B-E junction used for hjEi0 and hf0");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetahjei",230,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"1","1","Temperature coefficient for ahjEi");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetavgbe",231,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"1","1","Temperature coefficient for hjEi0");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("flsh",232,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Flag for turning on and off self-heating effect");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("zetarth",234,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::TEMPERATURE,"0","0","Temperature coefficient for Rth");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("alrth",235,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","First order relative TC of parameter Rth");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("flcomp",237,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::DC,"0","0","Flag for compatibility with v2.1 model (0=v2.1)");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("vbe_max",238,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES,"1e+99","1e+99","maximum voltage B-E junction");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("vbc_max",239,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES,"1e+99","1e+99","maximum voltage B-C junction");
modelInfos[MODEL_TYPE::HICUM2].modelParams.emplace_back("vce_max",240,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES,"1e+99","1e+99","maximum voltage C-E branch");
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("dtsh",265,SIM_MODEL::PARAM::DIR_INOUT,SIM_VALUE::TYPE_FLOAT,"°C",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Temperature increase due to self-heating",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("collnode",251,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of collector node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("basenode",252,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of base node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("emitnode",253,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of emitter node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("subsnode",254,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of substrate node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("tempnode",255,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Number of temperature node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("basebpnode",257,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","External base node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("basebinode",258,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_INT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal base node",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vbe",266,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","External BE voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vbc",268,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","External BC voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vce",269,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","External CE voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vbiei",271,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal BE voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vbpbi",272,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Peripheral Base to internal Base voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vbici",273,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal BC voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("vciei",274,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"V",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal CE voltage",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("ibei",280,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Intenral Base Emitter current",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("ibci",281,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal Base Collector current",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("rcx_t",282,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","External (saturated) collector series resistance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("re_t",283,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Emitter series resistance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("rbi",285,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Internal base resistance as calculated in the model",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("rb",286,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"ohm",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Total base resistance as calculated in the model",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("betadc",287,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Common emitter forward current gain",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("gms",289,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Transconductance of the parasitic substrate PNP",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("cpii",295,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Total internal BE capacitance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("cpix",296,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Total external BE capacitance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("cmui",297,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Total internal BC capacitance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("cmux",298,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Total external BC capacitance",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("betaac",300,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"A",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Small signal current gain",true);
modelInfos[MODEL_TYPE::HICUM2].instanceParams.emplace_back("crbi",301,SIM_MODEL::PARAM::DIR_OUT,SIM_VALUE::TYPE_FLOAT,"F",SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS,"","","Shunt capacitance across RBI as calculated in the model",true);