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kicad-source/eeschema/sim/sim_model_ngspice_data_jfet.cpp

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Breakup sim_model_ngspice_data.cpp into multiple files to avoid unreasonable compiler link times
2023-05-20 19:58:36 -04:00
/*
* This program source code file is part of KiCad, a free EDA CAD application.
*
* Copyright (C) 2022 Mikolaj Wielgus
Revise Copyright statement to align with TLF Recommendation is to avoid using the year nomenclature as this information is already encoded in the git repo. Avoids needing to repeatly update. Also updates AUTHORS.txt from current repo with contributor names
2025-01-01 13:30:11 -08:00
* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
Breakup sim_model_ngspice_data.cpp into multiple files to avoid unreasonable compiler link times
2023-05-20 19:58:36 -04:00
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License
* as published by the Free Software Foundation; either version 2
* of the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, you may find one here:
* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
* or you may search the http://www.gnu.org website for the version 2 license,
* or you may write to the Free Software Foundation, Inc.,
* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
*/
#include <sim/sim_model_ngspice.h>
void NGSPICE_MODEL_INFO_MAP::addJFET()
{
modelInfos[MODEL_TYPE::JFET] = { "JFET", "NJF", "PJF", { "D", "G", "S" }, "Junction Field effect transistor", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "type", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "njf", "pjf", "N-type or P-type JFET model" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "njf", 111, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type JFET model" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "pjf", 112, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type JFET model" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Threshold voltage" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "beta", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "0.0001", "0.0001", "Transconductance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "lambda", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "rd", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain conductance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "rs", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source conductance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "cgs", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S junction capactance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "cgd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D junction cap" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "pb", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "fc", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parameter" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "b", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Doping tail parameter" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Measurement temperature" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tcv", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vtotc", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V/°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient alternate" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "bex", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Mobility temperature exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "betatce", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "%/°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Mobility temperature exponent alternate" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "xti", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3", "3", "Gate junction saturation current temperature exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "eg", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1.11", "1.11", "Bandgap voltage" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "kf", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker Noise Coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "af", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker Noise Exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "nlev", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "2", "2", "Noise equation selector" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "gdsnoi", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Channel noise coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "alpha", 401, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Ionization coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "m_", 402, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Gate p-n grading coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "n", 403, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate p-n emission coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "isr", 404, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate p-n recombination current" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "nr", 405, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Gate p-n recombination current emission coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vk", 406, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Ionization knee voltage" );
// Instance parameters
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "off", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ic", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial VDS,VGS vector", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "m", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel multiplier", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "area", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Area factor", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ic-vds", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ic-vgs", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S volrage", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "temp", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "dtemp", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "drain-node", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "gate-node", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "source-node", 303, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "drain-prime-node", 304, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Internal drain node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "source-prime-node", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Internal source node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "vgs", 306, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Voltage G-S", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "vgd", 307, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Voltage G-D", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ig", 308, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current at gate node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "id", 309, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current at drain node", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "is", 319, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "igd", 310, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current G-D", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "gm", 311, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "gds", 312, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance D-S", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ggs", 313, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance G-S", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ggd", 314, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance G-D", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "qgs", 315, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Charge storage G-S junction", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "qgd", 317, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Charge storage G-D junction", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "cqgs", 316, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to charge storage G-S junction", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "cqgd", 318, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to charge storage G-D junction", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "p", 320, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Power dissipated by the JFET", true );
modelInfos[MODEL_TYPE::JFET2] = { "JFET2", "NJF", "PJF", { "D", "G", "S" }, "Short channel field effect transistor", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "type", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "njf", "pjf", "N-type or P-type JFET2 model" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "njf", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "NaN", "NaN", "N type JFET2 model" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "pjf", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "NaN", "NaN", "P type JFET2 model" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "acgam", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "af", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker Noise Exponent" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "beta", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V^2", SIM_MODEL::PARAM::CATEGORY::DC, "0.0001", "0.0001", "Transconductance parameter" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "cds", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "D-S junction capacitance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "cgd", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D junction capacitance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "cgs", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-S junction capacitance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "delta", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/W", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "coef of thermal current reduction" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfeta", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "drain feedback modulation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfe1", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfe2", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfg1", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfg2", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mvst", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "modulation index for subtreshold current" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mxi", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Saturation potential modulation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "fc", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ibd", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Breakdown current of diode junction" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "is_", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "kf", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lambda", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfgam", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain feedback coefficient" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg1", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg2", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "n", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction ideality factor" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "p_", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power law (triode region)" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vbi", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "pb", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1", "1", "n.a." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "q", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power Law (saturated region)" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "rd", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "rs", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "taud", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Thermal relaxation time" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "taug", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain feedback relaxation time" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vbd", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Breakdown potential of diode jnc" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ver", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "version number of PS model" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vst", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Crit Poten subthreshold conduction" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vt0", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Threshold voltage" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vto", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "xc", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "amount of cap. red at pinch-off" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "xi", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1000", "1000", "Velocity saturation index" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "z", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Rate of velocity saturation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfgam", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "High freq drain feedback" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain conductance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source conductance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "tnom", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Measurement temperature" );
// Instance parameters
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "off", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ic", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial VDS,VGS vector", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "m", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "area", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Area factor", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ic-vds", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ic-vgs", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S volrage", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "temp", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "dtemp", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "drain-node", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "gate-node", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "source-node", 303, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "drain-prime-node", 304, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Internal drain node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "source-prime-node", 305, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Internal source node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "vgs", 306, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Voltage G-S", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "vgd", 307, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Voltage G-D", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ig", 308, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current at gate node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "id", 309, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current at drain node", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "is", 319, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "igd", 310, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Current G-D", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "gm", 311, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "gds", 312, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance D-S", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ggs", 313, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance G-S", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ggd", 314, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Conductance G-D", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "qgs", 315, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Charge storage G-S junction", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "qgd", 317, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Charge storage G-D junction", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "cqgs", 316, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to charge storage G-S junction", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "cqgd", 318, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to charge storage G-D junction", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "p", 320, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "2", "2", "Power dissipated by the JFET2", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "vtrap", 321, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Quiescent drain feedback potential", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "vpave", 322, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Quiescent power dissipation", true );
}
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