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kicad-source/eeschema/sim/sim_model_ngspice_data_hfet.cpp

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Breakup sim_model_ngspice_data.cpp into multiple files to avoid unreasonable compiler link times
2023-05-20 19:58:36 -04:00
/*
* This program source code file is part of KiCad, a free EDA CAD application.
*
* Copyright (C) 2022 Mikolaj Wielgus
Revise Copyright statement to align with TLF Recommendation is to avoid using the year nomenclature as this information is already encoded in the git repo. Avoids needing to repeatly update. Also updates AUTHORS.txt from current repo with contributor names
2025-01-01 13:30:11 -08:00
* Copyright The KiCad Developers, see AUTHORS.TXT for contributors.
Breakup sim_model_ngspice_data.cpp into multiple files to avoid unreasonable compiler link times
2023-05-20 19:58:36 -04:00
*
* This program is free software; you can redistribute it and/or
* modify it under the terms of the GNU General Public License
* as published by the Free Software Foundation; either version 2
* of the License, or (at your option) any later version.
*
* This program is distributed in the hope that it will be useful,
* but WITHOUT ANY WARRANTY; without even the implied warranty of
* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
* GNU General Public License for more details.
*
* You should have received a copy of the GNU General Public License
* along with this program; if not, you may find one here:
* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
* or you may search the http://www.gnu.org website for the version 2 license,
* or you may write to the Free Software Foundation, Inc.,
* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
*/
#include <sim/sim_model_ngspice.h>
void NGSPICE_MODEL_INFO_MAP::addHFET()
{
modelInfos[MODEL_TYPE::HFET1] = { "HFET1", "NMF", "PMF", { "D", "G", "S" }, "HFET1 Model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "Pinch-off voltage" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "n.a." );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "lambda", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Output conductance parameter" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rd", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rs", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Source ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rg", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Gate ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rdi", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rsi", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Source ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rgs", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Gate-source ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rgd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "Gate-drain ohmic resistance" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "ri", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rf", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "eta", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Subthreshold ideality factor" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m_", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mc", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "gamma", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "sigma0", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "Threshold voltage coefficient" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vsigmat", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vsigma", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mu", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Moblity" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "di", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "Depth of device" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "delta", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vs", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "Saturation velocity" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "nmax", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "deltad", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "Thickness correction" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "js1d", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "js2d", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "js1s", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "js2s", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m1d", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m2d", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m1s", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m2s", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "epsi", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "p_", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "cm3", 152, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "a1", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "a2", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mv1", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "kappa", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "delf", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "fgds", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "tf", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "cds", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "phib", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "talpha", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mt1", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mt2", 147, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "ck1", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "ck2", 149, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "cm1", 150, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "cm2", 151, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "astar", 153, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "eta1", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "d1", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vt1", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "eta2", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "d2", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "vt2", 159, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "ggr", 160, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "del", 161, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "gatemod", 162, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "klambda", 163, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "kmu", 164, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "kvto", 165, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "type", 168, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "NHFET or PHFET" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "nhfet", 166, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "N HFET device" );
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "phfet", 167, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "P HFET device" );
// Instance parameters
// FIXME: Default values were lost for some reason, filled them with "".
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "off", 7, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "m", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "l", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length of device", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "w", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width of device", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "icvds", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "icvgs", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "temp", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "dtemp", 10, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "dnode", 201, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "gnode", 202, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "snode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "dprimenode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "sprimenode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "vgs", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "vgd", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain voltage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cg", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate capacitance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cd", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain capacitance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cgd", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate_Drain capacitance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "gm", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "gds", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "ggs", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source conductance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "ggd", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain conductance", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "qgs", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cqgs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "qgd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cqgd", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "cs", 8, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source current", true );
modelInfos[MODEL_TYPE::HFET1].instanceParams.emplace_back( "p", 9, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Power dissipated by the mesfet", true );
modelInfos[MODEL_TYPE::HFET2] = { "HFET2", "NMF", "PMF", { "D", "G", "S" }, "HFET2 Model", {}, {} };
// Model parameters
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "type", 139, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "664639780", "-1511458520", "NHFET or PHFET" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "nhfet", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type HFET model" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "phfet", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type HFET model" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "cf", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "d1", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "d2", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "del", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "delta", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "deltad", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Thickness correction" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "di", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Depth of device" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "epsi", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "eta", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Subthreshold ideality factor" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "eta1", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "eta2", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "gamma", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "ggr", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "js", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "klambda", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "kmu", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "knmax", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "kvto", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "lambda", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Output conductance parameter" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "m_", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "mc", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "mu", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Moblity" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "n", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "nmax", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "p_", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rd", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rdi", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rs", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rsi", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "sigma0", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "DIBL parameter" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vs", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Saturation velocity" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vsigma", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vsigmat", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vt0", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Pinch-off voltage" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vto", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vt1", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "vt2", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
// Instance parameters
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "off", 6, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initialli OFF", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "m", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Parallel Multiplier", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "l", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length of device", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "w", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width of device", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "icvds", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "icvgs", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "temp", 9, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance temperature", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "dtemp", 10, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance temperature difference", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "dnode", 201, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "gnode", 202, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "snode", 203, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "dprimenode", 204, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "sprimenode", 205, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "vgs", 206, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "vgd", 207, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain voltage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cg", 208, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate capacitance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cd", 209, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain capacitance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cgd", 210, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Gate_Drain capacitance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "gm", 211, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "gds", 212, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "ggs", 213, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source conductance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "ggd", 214, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain conductance", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "qgs", 215, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cqgs", 216, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "qgd", 217, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cqgd", 218, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "cs", 7, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source current", true );
modelInfos[MODEL_TYPE::HFET2].instanceParams.emplace_back( "p", 8, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Power dissipated by the mesfet", true );
}
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